The MD18211 high-frequency gate driver includes a 120-V bootstrap diode, and is designed to drive both high-side and low-side N-Channel MOSFETs with maximum control flexibility of independent inputs. The inputs can handle -10V to 20V DC, which increases robustness against ringing from gate transformer and/or parasitic inductance of long routing traces. High side driver is designed to be protected from negative spikes at HS pin as low as -18V, caused by parasitic inductance and stray capacitance. 15ns rising and 14ns falling propagation delay allows the systems operating at high frequency with less delay matching variations. The MD18211 is offered in 4mm x 4mm DFN-8  packages。

应用原理图